IRFP150N
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
?
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
-
+
?
-
-
?
+
?
R G
·
dv/dt controlled by R G
+
·
·
·
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
V DD
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
V GS =10V
*
D.U.T. I SD Waveform
Reverse
Recovery
Body Diode Forward
Current
Current
di/dt
D.U.T. V DS Waveform
Diode Recovery
Re-Applied
dv/dt
V DD
Voltage
Inductor Curent
Body Diode
Ripple  ≤  5%
Forward Drop
I SD
* V GS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
www.irf.com
7
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相关代理商/技术参数
IRFP150N_R4942 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP150NHR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 42A 3-Pin(3+Tab) TO-247AC
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IRFP150PBF 功能描述:MOSFET N-Chan 100V 41 Amp RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IRFP150PBF 制造商:International Rectifier 功能描述:MOSFET
IRFP150R 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-247
IRFP150R119 制造商:Rochester Electronics LLC 功能描述:- Bulk
IRFP150V 制造商:IRF 制造商全称:International Rectifier 功能描述:HEXFET Power MOSFET